Manufacturer Part #
MJD210G
MJD Series 25 V 5 A Tab Mount PNP Complementary Plastic Power TransistorTO-252-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:75 per Tube Package Style:TO-252-3 (DPAK) Mounting Method:Tab Mount |
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| Date Code: | 2435 | ||||||||||
Product Specification Section
onsemi MJD210G - Technical Attributes
Attributes Table
| Polarity: | PNP |
| Type: | Power Transistor |
| CE Voltage-Max: | 25V |
| Collector Current Max: | 5A |
| Power Dissipation-Tot: | 1.4W |
| DC Current Gain-Min: | 70 |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Tab Mount |
Features & Applications
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Features:
- Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain - hFE
- = 70 (Min) @ IC = 500 mAdc
- = 45 (Min) @ IC = 2 Adc
- = 10 (Min) @ IC = 5 Adc
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Low Collector-Emitter Saturation Voltage -VCE(sat)
- = 0.3 Vdc (Max) @ I C = 500 mAdc
- = 0.75 Vdc (Max) @ IC = 2.0 Adc
- High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
- Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Unit Price
75
$0.315
300
$0.31
1,125
$0.30
1,875
$0.295
3,750+
$0.29
Product Variant Information section
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Tab Mount