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Manufacturer Part #
STB12NM50ND
N-Channel 550 V 0.38 Ohm Surface Mount FDmesh II Power MosFet - D2PAK
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1747 | ||||||||||
Product Specification Section
STMicroelectronics STB12NM50ND - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
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STMicroelectronics STB12NM50ND - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.38Ω |
| Rated Power Dissipation: | 100W |
| Qg Gate Charge: | 30nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 15ns |
| Fall Time: | 17ns |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 850pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The STB12NM50ND is a N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET.
FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.
Features:
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications:
- Switching applications
Pricing Section
Global Stock:
25
USA:
25
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
1
$1.10
10
$1.07
40
$1.05
150
$1.03
500+
$1.00
Product Variant Information section
Available Packaging
Package Qty:
1000 per
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount