
Manufacturer Part #
IRF1407PBF
Single N-Channel 75 V 7.8 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
Product Specification Section
Infineon IRF1407PBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Labeling Change
09/19/2024 Details and Download
Multiple Material Change
12/18/2023 Details and Download
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Active
Active
Infineon IRF1407PBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 75V |
Drain-Source On Resistance-Max: | 7.8mΩ |
Rated Power Dissipation: | 330W |
Qg Gate Charge: | 160nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 130A |
Turn-on Delay Time: | 11ns |
Turn-off Delay Time: | 150ns |
Rise Time: | 150ns |
Fall Time: | 140ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Input Capacitance: | 5600pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Features & Applications
Pricing Section
Global Stock:
12,150
USA:
12,150
Factory Lead Time:
18 Weeks
Quantity
Unit Price
50
$0.785
200
$0.76
750
$0.74
1,500
$0.73
3,750+
$0.705
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole