
Manufacturer Part #
IMZ120R030M1HXKSA1
IMZ Series 1200 V 30 mOhm 63 nC Through Hole Silicon Carbide Mosfet - TO-247-4
Product Specification Section
Infineon IMZ120R030M1HXKSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Material Supplier Change
05/13/2025 Details and Download
Part Status:
Active
Active
Infineon IMZ120R030M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 42mΩ |
Rated Power Dissipation: | 227W |
Qg Gate Charge: | 63nC |
Gate-Source Voltage-Max [Vgss]: | 18V |
Drain Current: | 56A |
Turn-on Delay Time: | 7.7ns |
Turn-off Delay Time: | 17.3ns |
Rise Time: | 11.6ns |
Fall Time: | 11.5ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4.5V |
Technology: | SiC |
Input Capacitance: | 2120pF |
Series: | IMZ120 |
Package Style: | TO-247-4 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
12 Weeks
Quantity
Unit Price
30
$10.30
60
$10.24
120
$10.19
150
$10.17
450+
$10.07
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-4
Mounting Method:
Through Hole