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  6. IMZ120R030M1HXKSA1

Infineon | IMZ120R030M1HXKSA1

Manufacturer Part #

IMZ120R030M1HXKSA1

IMZ Series 1200 V 30 mOhm 63 nC Through Hole Silicon Carbide Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMZ120R030M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 42mΩ
Rated Power Dissipation: 227W
Qg Gate Charge: 63nC
Gate-Source Voltage-Max [Vgss]: 18V
Drain Current: 56A
Turn-on Delay Time: 7.7ns
Turn-off Delay Time: 17.3ns
Rise Time: 11.6ns
Fall Time: 11.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 2120pF
Series: IMZ120
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$2,416.80
USD
Quantity
Unit Price
30
$10.19
60
$10.14
120
$10.08
150
$10.07
450+
$9.96
Product Variant Information section