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onsemi | FDMA410NZ

Manufacturer Part #

FDMA410NZ

FDMA410NZ Series 20 V 9.5 A 23 mOhm N-Ch PowerTrench® MOSFET - MicroFET-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDMA410NZ - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 2.4|W
Qg Gate Charge: 14nC
Package Style:  MICROFET-6
Mounting Method: Surface Mount
Features & Applications

The FDMA410NZ Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe

Features:

  • Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A
  • Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A
  • Max rDS(on) = 36 m? at VGS = 1.8 V, ID = 4.0 A
  • Max rDS(on) = 50 m? at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level > 2.5 kV (Note 3)
  • Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
  • RoHS Compliant

Applications:

  • Li-lon Battery Pack
  • Baseband Switch
  • Load Switch
  • DC-DC Conversion
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
2
Factory Lead Time:
17 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$1,590.00
USD
Quantity
Unit Price
3,000
$0.27
6,000
$0.265
12,000+
$0.26
Product Variant Information section