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onsemi | SI4532DY

Manufacturer Part #

SI4532DY

Dual N & P-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi SI4532DY - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 65mΩ/85mΩ
Rated Power Dissipation: 0.9|W
Qg Gate Charge: 3.7nC/5nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The SI4532DY is a 30 V 65 mO Dual N and P-Channel Enhancement Mode Field Effect Transistor. It Comes in a Package of SOIC-8 and Operating Temperature Ranges from -55 to 150 °C.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
 
Product Features:

  • N-Channel 3.9 A, 30 V
    • RDS(ON) = 0.065 O @ VGS = 10 V
    • RDS(ON) = 0.095 O @ VGS = 4.5V
  • P-Channel -3.5 A,-30 V
    • RDS(ON) = 0.085 O @ VGS = -10 V
    • RDS(ON) = 0.190 O @ VGS = -4.5 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package
  • Dual (N & P-Channel) MOSFET in surface mountpackage
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,087.50
USD
Quantity
Unit Price
2,500
$0.435
5,000
$0.43
7,500
$0.425
12,500+
$0.42
Product Variant Information section