Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IRF530NSTRLPBF
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2508 | ||||||||||
Infineon IRF530NSTRLPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF530NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/8173879
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF530NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/8173879
Infineon IRF530NSTRLPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 90mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 37nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 9.2ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 22ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 920pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount