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Référence fabricant
IRF530NSTRLPBF
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2105 | ||||||||||
Infineon IRF530NSTRLPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF530NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf530nstrlpbf-infineon-1195288
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF530NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf530nstrlpbf-infineon-1195288
Infineon IRF530NSTRLPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 90mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 37nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 9.2ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 22ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 920pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
800 par
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount