IRF530NSTRLPBF in Reel by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF530NSTRLPBF

Infineon | IRF530NSTRLPBF

Manufacturer Part #

IRF530NSTRLPBF

Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2507
Product Specification Section
Infineon IRF530NSTRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 90mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 37nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 17A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 35ns
Rise Time: 22ns
Fall Time: 25ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 920pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
17,600
USA:
17,600
On Order:Order inventroy details
85,600
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$316.00
USD
Quantity
Unit Price
800
$0.395
1,600
$0.39
4,000
$0.385
8,000+
$0.375
Product Variant Information section