IRF7380TRPBF in Reel by Infineon | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IRF7380TRPBF

Infineon | IRF7380TRPBF

Manufacturer Part #

IRF7380TRPBF

Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2403
Product Specification Section
Infineon IRF7380TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 73mΩ
Rated Power Dissipation: 2W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.6A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 41ns
Rise Time: 10ns
Fall Time: 17ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 660pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The IRF7380TRPBF is a Single N-Channel Hexfet Power Mosfet, available in surface mount SOIC-8 package.

Benefits:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • High frequency DC-DC converters
  • Lead-Free
    Read More...
    Pricing Section
    Global Stock:
    0
    USA:
    0
    On Order:Order inventroy details
    52,000
    Factory Stock:Factory Stock:
    0
    Factory Lead Time:
    18 Weeks
    Minimum Order:
    4000
    Multiple Of:
    4000
    Total
    $1,280.00
    USD
    Quantity
    Unit Price
    4,000
    $0.32
    8,000
    $0.315
    12,000+
    $0.31
    Product Variant Information section