
Manufacturer Part #
BSC900N20NS3GATMA1
Single N-Channel 200 V 90 mOhm 9 nC OptiMOS™ Power Mosfet - TDSON-8
Product Specification Section
Infineon BSC900N20NS3GATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
PCN UPDATE
06/28/2022 Details and Download
Updated information marked in BLUE TYPE Original PCN N? 2022-001-A dated 2022-05-30 Detailed change information Subject : Capacity extension and harmonization of mould compound at Tongfu Microelectronics Co. Ltd. for PG-TDSON-8 package Reason: Expansion of assembly and test production to cover increasing customer demand, and enable flexible manufacturing
Assembly Site Change
06/06/2022 Details and Download
Part Status:
Active
Active
Infineon BSC900N20NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 90mΩ |
Rated Power Dissipation: | 62.5|W |
Qg Gate Charge: | 9nC |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
45,000
USA:
45,000
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
5,000+
$0.53
Product Variant Information section
Available Packaging
Package Qty:
5000 per Reel
Mounting Method:
Surface Mount