Manufacturer Part #
FQD13N10TM
N-Channel 100 V 0.18 Ohm 16 nC Surface Mount Mosfet - TO-252-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi FQD13N10TM - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Part Status:
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onsemi FQD13N10TM - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 180mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 12nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 10A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 55ns |
| Fall Time: | 25ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 345pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The FQD13N10TM is a 100 V 0.18 Ohm N-Channel enhancement mode power field effect transistor.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand a high energy pulse in the avalanche and commutation modes.
Features:
- 10 A, 100 V, RDS(on) = 0.18 Ω @VGS = 10 V
- Low gate charge (typical 12nC)
- Low Crss (typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications:
- Audio amplifier
- DC/DC converters
- DC motor control ?
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
9 Weeks
Quantity
Unit Price
2,500
$0.355
7,500
$0.35
12,500+
$0.34
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount