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Manufacturer Part #

IRF9310TRPBF

Single P-Channel 30V 6.8 mOhm 58 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF9310TRPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: -30V
Drain-Source On Resistance-Max: 6.8mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 58nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -20A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 65ns
Rise Time: 47ns
Fall Time: 70ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -2.4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 5250pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,080.00
USD
Quantity
Unit Price
4,000
$0.52
8,000
$0.515
12,000+
$0.51
Product Variant Information section