text.skipToContent text.skipToNavigation

Manufacturer Part #

IPD60R600C6ATMA1

Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R600C6ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 600mΩ
Rated Power Dissipation: 63|W
Qg Gate Charge: 20.5nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,350.00
USD
Quantity
Unit Price
2,500
$0.54
5,000
$0.535
7,500
$0.53
10,000
$0.525
12,500+
$0.515
Product Variant Information section