SIA483DJ-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Vishay | SIA483DJ-T1-GE3

Manufacturer Part #

SIA483DJ-T1-GE3

Single P-Channel 30 V 3.5 W 45 nC Silicon SMT Mosfet - POWERPAK-SC-70-6L

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIA483DJ-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.03Ω
Rated Power Dissipation: 3.5W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 37ns
Turn-off Delay Time: 27ns
Rise Time: 60ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Technology: Si
Height - Max: 0.8mm
Length: 2.15mm
Input Capacitance: 1550pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
57,000
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$495.00
USD
Quantity
Unit Price
3,000
$0.165
6,000
$0.163
9,000
$0.162
12,000
$0.161
15,000+
$0.159
Product Variant Information section