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Diodes Incorporated | DMTH6004SCTB-13

Manufacturer Part #

DMTH6004SCTB-13

MOSFET Enh Mode FET 41V to 60V TO263

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH6004SCTB-13 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 3.4mΩ
Rated Power Dissipation: 4.7W
Qg Gate Charge: 95.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 13.2ns
Turn-off Delay Time: 31ns
Rise Time: 11.7ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 4556pF
Package Style:  TO-263AB
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$572.00
USD
Quantity
Unit Price
800
$0.715
1,600
$0.705
3,200
$0.695
12,000+
$0.675
Product Variant Information section