AIMCQ120R040M1TXTMA1 in Reel by Infineon | Silicon Carbide MOSFETs (SiC MOSFETs) | Future Electronics
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Manufacturer Part #

AIMCQ120R040M1TXTMA1

SiC,1200V, 61A, 040MOHM, N-CH, QDPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon AIMCQ120R040M1TXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2V
Drain Current: 61A
Input Capacitance: 1264pF
Power Dissipation: 341W
Operating Temp Range: -55°C to +175°C
Package Style:  PG-HDSOP-22
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
750
Multiple Of:
750
Total
$6,240.00
USD
Quantity
Unit Price
750+
$8.32
Product Variant Information section