Manufacturer Part #
IQD016N08NM5CGSCATMA1
N-Channel 80 V 323 A 333 W 1.57mOhm Surface Mount Mosfet - PG-WHTFN-9-U02
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:5000 per Package Style:PG-WHTFN-9 Mounting Method:Surface Mount |
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| Date Code: | 2435 | ||||||||||
Product Specification Section
Infineon IQD016N08NM5CGSCATMA1 - Product Specification
Infineon IQD016N08NM5CGSCATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 1.57mΩ |
| Rated Power Dissipation: | 333W |
| Qg Gate Charge: | 106nC |
| Gate-Source Voltage-Max [Vgss]: | ±20V |
| Drain Current: | 323A |
| Turn-on Delay Time: | 15s |
| Turn-off Delay Time: | 29s |
| Rise Time: | 7s |
| Fall Time: | 10s |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3.8V |
| Technology: | Si |
| Input Capacitance: | 9200pF |
| Series: | OptiMOS™ 5 |
| Package Style: | PG-WHTFN-9 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
100
USA:
100
On Order:
0
Factory Lead Time:
52+Weeks
Quantity
Unit Price
1
$9.07
20
$8.11
100
$7.59
500
$7.07
2,500+
$6.55
Product Variant Information section
Available Packaging
Package Qty:
5000 per
Package Style:
PG-WHTFN-9
Mounting Method:
Surface Mount