Manufacturer Part #
HUF75345P3
N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | 2519 | ||||||||||
Product Specification Section
onsemi HUF75345P3 - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi HUF75345P3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.007Ω |
| Rated Power Dissipation: | 325|W |
| Qg Gate Charge: | 275nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The HUF75345P3 is a N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Features:
- 75 A, 55 V
- Simulation models
- Temperature Compensated PSPICE® and SABER™ Models
- Thermal Impedance SPICE and SABER Models Available on the Web
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Applications:
- TBA
Pricing Section
Global Stock:
360
USA:
360
Factory Lead Time:
16 Weeks
Quantity
Unit Price
800
$1.36
1,600
$1.35
2,400
$1.34
4,000+
$1.33
Product Variant Information section
Available Packaging
Package Qty:
800 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount