|Collector Current Max||8A|
|DC Current Gain-Min||1000|
Features and Applications
The MJD122T4 device ia manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
- Low collector-emitter saturation voltage
- Integrated antiparallel collector-emitter diode
- General purpose linear and switching