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Manufacturer Part #

IPP023NE7N3GXKSA1

Single N-Channel 75 V 2.3 mOhm 155 nC OptiMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP023NE7N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 2.3mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 155nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$760.00
USD
Quantity
Unit Price
50
$1.52
1,000
$1.51
2,500
$1.50
5,000+
$1.48
Product Variant Information section