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Manufacturer Part #

IRF7769L1TRPBF

Single N-Channel 100 V 3.5 mOhm 200 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF7769L1TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 3.3|W
Qg Gate Charge: 200nC
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$8,960.00
USD
Quantity
Unit Price
4,000+
$2.24
Product Variant Information section