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STMicroelectronics | STB33N65M2

Manufacturer Part #

STB33N65M2

Single N-Channel 650 V 140 mOhm 41.5 nC MDmesh™ M2 Power MOSFET - D2PAK-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB33N65M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.14Ω
Rated Power Dissipation: 190W
Qg Gate Charge: 41.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 24A
Turn-on Delay Time: 13.5ns
Turn-off Delay Time: 72.5ns
Rise Time: 11.5ns
Fall Time: 9ns
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 1790pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,160.00
USD
Quantity
Unit Price
1,000
$2.16
2,000
$2.15
3,000
$2.14
4,000+
$2.12
Product Variant Information section