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Référence fabricant
MC33153PG
MC Series 1 A 20 V 100 kOhm Through Hole Single IGBT Gate Driver - PDIP-8
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :PDIP-8 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
onsemi MC33153PG - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Qualification of JCET Chuzhou for PDIP (8-16 Lead) package Assembly This is a Final Product Change Notice to alert customers of the additional qualification of JCET Chuzhou, China (ISO9002/ISO14000/SAC Level 1 Certified) to assemble the PDIP products listed in this notification. JCET will provide additional capacity to supplement ON Semiconductor's current assembly facilities. Upon effectivity of this FPCN, these parts may be sourced from JCET as well as any previously qualified manufacturing location.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=MC33153PG&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--analog--drivers--mosfet-igbt-drivers/mc33153pg-onsemi-1478783
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=MC33153PG&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--analog--drivers--mosfet-igbt-drivers/mc33153pg-onsemi-1478783
onsemi MC33153PG - Caractéristiques techniques
| No of Outputs: | Single |
| Output Impedance: | 100kΩ |
| Peak Output Current: | 1A |
| Supply Voltage-Max: | 20V |
| Style d'emballage : | PDIP-8 |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The MC33153 Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual-in-line and surface mount packages.
Key Features:
- High Current Output Stage: 1.0 A Source/2.0 A Sink
- Protection Circuits for Both Conventional and Sense IGBTs
- Programmable Fault Blanking Time
- Protection against Overcurrent and Short Circuit
- Undervoltage Lockout Optimized for IGBT’s
- Negative Gate Drive Capability
- Cost Effectively Drives Power MOSFETs and Bipolar Transistors
- This is a Pb-Free and Halide-Free Device
To learn more about the MC33153 product family, Click Here
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
PDIP-8
Méthode de montage :
Through Hole
