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Product Specification Section
onsemi BC857BDW1T1G - Technical Attributes
Attributes Table
Polarity: PNP
Type: General Purpose
CE Voltage-Max: 45V
Collector Current Max: 100mA
Power Dissipation-Tot: 380mW
Collector - Base Voltage: 50V
Collector - Emitter Saturation Voltage: 0.65V
Emitter - Base Voltage: 5V
DC Current Gain-Min: 150
Collector - Current Cutoff: 4µA
Configuration: Dual
Frequency - Transition: 100MHz
Operating Temp Range: -55°C to +150°C
Noise Figure: 10dB
Moisture Sensitivity Level: 1
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The BC857BDW1T1G is a PNP Dual General Purpose Transistor, available in a SOT-363 package.

Features:

  • AEC−Q101 Qualified and PPAP Capable
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications:

  • General purpose amplifier applications

Pricing Section
Global Stock:
0
USA:
0
330,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
25 Weeks
Minimum Order:
30000
Multiple Of:
30000
Total
$507.00
USD
Quantity
Unit Price
30,000
$0.0169
60,000
$0.0167
90,000+
$0.0164