text.skipToContent text.skipToNavigation

Référence fabricant

BFU730F,115

BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

Modèle ECAD:
Nom du fabricant: NXP
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
NXP BFU730F,115 - Caractéristiques techniques
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 2.8V
Collector Current Max: 30mA
Power Dissipation-Tot: 197mW
Collector - Base Voltage: 10V
Emitter - Base Voltage: 1V
DC Current Gain-Min: 205
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 55GHz
Noise Figure: 1.3dB
Moisture Sensitivity Level: 1
Style d'emballage :  SOT-343F-4
Méthode de montage : Surface Mount
Fonctionnalités et applications

The BFU730F Series is a NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features:

  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.8 dB at 5.8 GHz
  • High maximum power gain 18.5 dB at 5.8 GHz
  • 110 GHz fT silicon germanium technology

Applications:

  • 2nd LNA stage and mixer stage in DBS LNB’s
  • Low noise amplifiers for microwave communications systems
  • Ka band oscillators DRO’s
  • Low current battery equipped applications
  • Microwave driver / buffer applications
  • GPS
  • RKE
  • AMR
  • ZigBee
  • LTE, cellular, UMTS
  • SDARS first stage LNA
  • FM radio
  • Mobile TV
  • Bluetooth

View the Series NPN RF Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
N/A
Commande minimale :
6000
Multiples de :
3000
Total 
1 260,00 $
USD
Quantité
Prix unitaire
3 000
$0.215
6 000
$0.21
15 000+
$0.205
Product Variant Information section