Manufacturer Part #
FP35R12W2T7BPSA1
1200 V 35 A 20 mW Trench Field Stop Three Phase Inverter IGBT Module
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:15 per Tray Package Style:Module Mounting Method:Chassis Mount | ||||||||||
| Date Code: | 2545 | ||||||||||
Infineon FP35R12W2T7BPSA1 - Product Specification
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Detailed change informationSubject:Rth/Zth updated datasheets for Easy 1200V IGBT7 non TIM module typesDescription OldRth,jh values are specified with a thermal conductivity of thermal ?=1W/(m*K).NewRth,jh values are specified with a thermal conductivity of the thermal paste ? = 4.3 W/(m*K)and values are changed accordingly. Reason:Improvement of thermal evaluation. Specify a Rth,jh with a thermal conductity of thermal paste which is more reasonable from application / system design point of view.Impact Of Change:Due to the adjustment of the thermal evaluation, Zth,jh curves differ compared to the old curves in the datasheet. Due to the difference of the thermal conductivity of the thermal paste IGBT and Diode Rth,jh data are different in the datasheet.Implementation date 2025-08-01
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Infineon FP35R12W2T7BPSA1 - Technical Attributes
| CE Voltage-Max: | 1200V |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 70A |
| Collector - Emitter Saturation Voltage: | 1.6V |
| Turn-on Delay Time: | 0.037µs |
| Turn-off Delay Time: | 0.26µs |
| Qg Gate Charge: | 548nC |
| Leakage Current: | 100nA |
| Input Capacitance: | 6.62nF |
| Operating Temp Range: | -40°C to +175°C |
| No of Terminals: | 35 |
| Package Style: | Module |
| Mounting Method: | Chassis Mount |
Available Packaging
Package Qty:
15 per Tray
Package Style:
Module
Mounting Method:
Chassis Mount