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Manufacturer Part #

BSP149H6327XTSA1

Single N-Channel 200 V 3.5 Ohm 11 nC SIPMOS® Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2528
Product Specification Section
Infineon BSP149H6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 3.5Ω
Rated Power Dissipation: 1.8|W
Qg Gate Charge: 11nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$395.00
USD
Quantity
Unit Price
1,000
$0.395
3,000
$0.385
10,000
$0.38
15,000+
$0.37
Product Variant Information section