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Manufacturer Part #

BSS670S2LH6327XTSA1

Single N-Channel 55 V 650 mOhm 1.7 nC OptiMOS™ Enhancement Mode Mosfet - SOT-23

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2214
Product Specification Section
Infineon BSS670S2LH6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 650mΩ
Rated Power Dissipation: 360|mW
Qg Gate Charge: 1.7nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
30,000
Germany (Online Only):
30,000
504,000
Factory Stock:Factory Stock:
0
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$250.80
USD
Quantity
Web Price
3,000
$0.0836
6,000
$0.0683
12,000
$0.0672
15,000+
$0.0669
Product Variant Information section