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Manufacturer Part #

FDC6561AN

Dual N-Channel 30 V 0.095 Ohm Logic Level PowerTrench Mosfet SSOT-6

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.095Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 3.2nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6561AN is a 30 V 0.095 Ω Dual N-Channel Logic Level PowerTrench Mosfet available in SSOT-6 package .

These N-Channel Logic Level MOSFETs are advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.     These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Features:

  • 2.5 A, 30 V.   RDS(ON) = 0.095 Ω @ VGS = 10 V, RDS(ON) = 0.145 Ω @ VGS = 4.5 V.
  • Very fast switching.
  • Low gate charge (2.1nC typical).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock:
159,000
Minimum Order:
3,000
Multiple Of:
3,000
30,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$459.00
USD
Quantity
Web Price
3,000
$0.153
6,000
$0.146
9,000
$0.139
12,000
$0.132
15,000+
$0.125