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onsemi | FDD86102LZ

Manufacturer Part #

FDD86102LZ

FDD86102LZ Series 100 V 8 A 22.5 mOhm N-Ch Shielded Gate PowerTrench Mosfet

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDD86102LZ - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 22.5mΩ
Rated Power Dissipation: 3.1|W
Qg Gate Charge: 18nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 6.6ns
Turn-off Delay Time: 20ns
Rise Time: 2.3ns
Fall Time: 2.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.5V
Technology: PowerTrench
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1157pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
5
Factory Lead Time:
22 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,725.00
USD
Quantity
Unit Price
2,500
$0.69
5,000
$0.68
7,500
$0.675
10,000+
$0.67
Product Variant Information section