Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
FQD5N60CTM
Single N-Channel 600 V 2.5 Ohm 19 nC 2.5 W DMOS SMT Mosfet - TO-252-3
| | |||||||||||
| | |||||||||||
| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi FQD5N60CTM - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FQD5N60CTM&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fqd5n60ctm-onsemi-2529907
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FQD5N60CTM&field4=onsemi&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fqd5n60ctm-onsemi-2529907
onsemi FQD5N60CTM - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 2.5Ω |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 2.8A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 85ns |
| Rise Time: | 90ns |
| Fall Time: | 100ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | DMOS |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 670pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The FQD5N60CTM is a 600 V 2.5 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features:
- 2.8 A, 600 V
- RDS(on) = 2.5 Ω @VGS = 10 V
- Low gate charge (typical 15 nC)
- Low Crss (typical 6.5 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications:
- High efficiency SMPS
- Active power factor correction
- Electronic lamp ballasts
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Unit Price
2,500
$0.54
5,000
$0.535
7,500
$0.53
10,000
$0.525
12,500+
$0.52
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount