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onsemi | FQD5N60CTM

Manufacturer Part #

FQD5N60CTM

Single N-Channel 600 V 2.5 Ohm 19 nC 2.5 W DMOS SMT Mosfet - TO-252-3

ECAD Model:
Mfr. Name: onsemi
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Product Specification Section
onsemi FQD5N60CTM - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 2.5Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 2.8A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 85ns
Rise Time: 90ns
Fall Time: 100ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: DMOS
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 670pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD5N60CTM is a 600 V 2.5 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.  

Features:

  • 2.8 A, 600 V
  • RDS(on) = 2.5 Ω @VGS = 10 V
  • Low gate charge (typical 15 nC)
  • Low Crss (typical 6.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficiency SMPS
  • Active power factor correction
  • Electronic lamp ballasts

 

 

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,425.00
USD
Quantity
Unit Price
2,500
$0.57
5,000
$0.56
7,500
$0.555
12,500+
$0.545
Product Variant Information section