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Infineon | IPD50R2K0CEAUMA1

Manufacturer Part #

IPD50R2K0CEAUMA1

MOSFET N-CH 500V 2.4A TO252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD50R2K0CEAUMA1 - Technical Attributes
Attributes Table
Product Status: Not Recommended for New Designs
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 33W
Qg Gate Charge: 6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.6A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 21ns
Rise Time: 5ns
Fall Time: 38ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 124pF
Series: CoolMOS CE
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$447.50
USD
Quantity
Unit Price
2,500
$0.179
7,500
$0.175
25,000
$0.172
37,500+
$0.169
Product Variant Information section