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Infineon | IPD60R600P7SAUMA1

Manufacturer Part #

IPD60R600P7SAUMA1

Single N-Channel 650V 600 mOhm 9 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2512
Product Specification Section
Infineon IPD60R600P7SAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 30W
Qg Gate Charge: 9C
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 37ns
Rise Time: 6ns
Fall Time: 19ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 363pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:Order inventroy details
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$442.50
USD
Quantity
Unit Price
2,500
$0.177
7,500
$0.174
10,000
$0.173
25,000
$0.171
37,500+
$0.168
Product Variant Information section