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Infineon | IPN70R600P7SATMA1

Manufacturer Part #

IPN70R600P7SATMA1

Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2252
Product Specification Section
Infineon IPN70R600P7SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 6.9W
Qg Gate Charge: 10.5nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 8.5A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 63ns
Rise Time: 5.5ns
Fall Time: 23ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 364pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$660.00
USD
Quantity
Unit Price
3,000
$0.22
15,000
$0.215
30,000+
$0.21
Product Variant Information section