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Infineon | IPP030N10N5AKSA1

Manufacturer Part #

IPP030N10N5AKSA1

IPP030N10N5 Series 100 V 120 A OptiMOS™5 Power Transistor MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP030N10N5AKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 112nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 120A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 52ns
Rise Time: 15ns
Fall Time: 17ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 7920pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$1,195.00
USD
Quantity
Unit Price
50
$2.39
1,000
$2.37
1,500
$2.36
2,000
$2.35
2,500+
$2.33
Product Variant Information section