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Manufacturer Part #

IPP040N08NF2SAKMA1

Single N-Channel 80 V 4 mOhm 54 nC StrongIRFET™ 2 Power MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2117
Product Specification Section
Technical Attributes
Attributes Table
Series: StrongIRFET™ 2
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 4mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 54nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 115A
Turn-on Delay Time: 13.6ns
Turn-off Delay Time: 27.7ns
Rise Time: 54.2ns
Fall Time: 12.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 3800pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications
Infineon's StrongIRFET™ 2 power MOSFET 80V features low RDS(on) of 4.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP040N08NF2S achieves 40 percent lower RDS(on) and 40 percent Qg improvement.


Summary of Features
 •Broad availability from distribution partners
 •Excellent price/performance ratio
 •Ideal for high- and low-switching frequency
 •Industry standard footprint through-hole package
 •High current rating
 •Capable of wave-soldering


Benefits
 •Multi-vendor compatibility
 •Right-fit products
 •Supports a wide variety of applications
 •Standard pinout allows for drop-in replacement
 •Increased current carrying capability
 •Ease of manufacturing
 
Pricing Section
Global Stock:
3,900
Germany (Online Only):
3,900
6,000
Factory Stock:Factory Stock:
0
Minimum Order:
50
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$130.00
USD
Quantity
Web Price
50+
$2.60
Product Variant Information section