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Infineon | IRFH8318TRPBF

Manufacturer Part #

IRFH8318TRPBF

Single N-Channel 30 V 3.1 mOhm 41 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFH8318TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 4.6mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 27A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 18ns
Rise Time: 33ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.35V
Technology: Si
Height - Max: 1.17mm
Length: 5.15mm
Input Capacitance: 3180pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,280.00
USD
Quantity
Unit Price
4,000
$0.32
8,000
$0.315
20,000+
$0.31
Product Variant Information section