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Manufacturer Part #
IRFR9024NTRPBF
Single P-Channel 55V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Package Style:TO-252AA Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2025 | ||||||||||
Infineon IRFR9024NTRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Change of lot number format in bar code labelling and marking of physical units affecting products assembled at GTBF, Ltd., China Detailed Change Information: Subject: Change of lot number format in bar code labelling and marking of physical units affecting products assembled at GTBF, Ltd., China Reason: Standardization of International Rectifier (IR) Legacy products with Infineon Technologies (IFX) lot number nomenclature format. Impact of Change: No impact on electrical performance of the products as only the product marking and labelling on the product packing will be improved
Part Status:
Infineon IRFR9024NTRPBF - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.175Ω |
| Rated Power Dissipation: | 38W |
| Qg Gate Charge: | 19nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 23ns |
| Rise Time: | 55ns |
| Fall Time: | 37ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 350pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2000 per
Package Style:
TO-252AA
Mounting Method:
Surface Mount