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Manufacturer Part #

IXFX80N50P

N-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET

ECAD Model:
Mfr. Name: IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
IXYS IXFX80N50P - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 65mΩ
Rated Power Dissipation: 1040|W
Qg Gate Charge: 197nC
Package Style:  PLUS-247
Mounting Method: Flange Mount
Features & Applications

The IXFX80N50P is a 500 V 80 A N-Channel Enhancement mode Power Mosfet available in PLUS-247 Package.

Features:

  • International standard package
  • Unclamped Inductive Switching (UIS) rated
  • Low package inductance- easy to drive and to protect

Advantages:

  • Easy to mount
  • Space savings
  • High power density
Pricing Section
Global Stock:
0
USA:
0
220
Factory Stock:Factory Stock:
0
Factory Lead Time:
43 Weeks
Minimum Order:
300
Multiple Of:
30
Total
$4,662.00
USD
Quantity
Web Price
1
$16.32
5
$16.11
25
$15.90
50
$15.81
150+
$15.54
Product Variant Information section