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ROHM | RS1E200GNTB

Manufacturer Part #

RS1E200GNTB

N-Channel 30 V 4.6 mOhm 25 W Surface Mount Power Mosfet - HSOP-8

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM RS1E200GNTB - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 4.6mΩ
Rated Power Dissipation: 25W
Qg Gate Charge: 16.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 57A
Turn-on Delay Time: 13.2ns
Turn-off Delay Time: 34.7ns
Rise Time: 7.2ns
Fall Time: 8.4ns
Gate Source Threshold: 2.5V
Input Capacitance: 1080pF
Package Style:  HSOP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$800.00
USD
Quantity
Unit Price
2,500
$0.32
7,500
$0.315
12,500+
$0.31
Product Variant Information section