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Manufacturer Part #

SCT011H75G3AG

Automotive-grade silicon carbide Power MOSFET

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT011H75G3AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 750V
Drain Current: 110A
Input Capacitance: 3831pF
Power Dissipation: 652W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$14,630.00
USD
Quantity
Unit Price
1,000+
$14.63
Product Variant Information section