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Vishay | SI5922DU-T1-GE3

Manufacturer Part #

SI5922DU-T1-GE3

Dual N-Channel 30 V 19.2 mOhm 10.4 W TrenchFET Mosfet -PowerPAK ChipFET Dual

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI5922DU-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 19.2mΩ
Rated Power Dissipation: 2.3W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 15ns
Rise Time: 25ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 765pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
6000
Multiple Of:
3000
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Total
$4,230.00
USD
Quantity
Unit Price
3,000
$0.715
6,000
$0.705
9,000+
$0.695
Product Variant Information section