SI6913DQ-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Vishay | SI6913DQ-T1-GE3

Manufacturer Part #

SI6913DQ-T1-GE3

SI6913DQ Series 12 V 21 mOhm Dual P-Channel MOSFET - TSSOP-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2414
Product Specification Section
Vishay SI6913DQ-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 0.021Ω
Rated Power Dissipation: 0.83W
Qg Gate Charge: 18.5nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 4.9A
Turn-on Delay Time: 45ns
Turn-off Delay Time: 130ns
Rise Time: 80ns
Fall Time: 80ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.9V
Package Style:  TSSOP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
6,000
Factory Lead Time:
8 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,680.00
USD
Quantity
Unit Price
3,000
$0.56
6,000+
$0.55
Product Variant Information section