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Manufacturer Part #

SIS413DN-T1-GE3

Single P-Channel -30 V 52 W 110 nC TrenchMOS Surface Mount Mosfet

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2446
Product Specification Section
Vishay SIS413DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 9.4mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 73nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14.7A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 45ns
Rise Time: 11ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 4280pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
33,000
USA:
33,000
24,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
44 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$675.00
USD
Quantity
Unit Price
3,000
$0.225
6,000
$0.22
30,000+
$0.215
Product Variant Information section