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Manufacturer Part #
STB10NK60ZT4
N-Channel 600 V 0.75 Ohm Zener Protected Power MosFet - I2PAK
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-262 (I2PAK) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STB10NK60ZT4 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
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STMicroelectronics STB10NK60ZT4 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.75Ω |
| Rated Power Dissipation: | 115|W |
| Qg Gate Charge: | 70nC |
| Package Style: | TO-262 (I2PAK) |
| Mounting Method: | Through Hole |
Features & Applications
The STB10NK60ZT4 is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Features:
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very good manufacturing reliability
Application:
- Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
1,000
$1.70
2,000
$1.69
3,000
$1.68
5,000+
$1.66
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-262 (I2PAK)
Mounting Method:
Through Hole
