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Manufacturer Part #

STB100NF04T4

STB100 Series 40 V 120 A 4.6 mOhm 300 W 110 nC N-Channel MOSFET - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB100NF04T4 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 0.0046Ω
Rated Power Dissipation: 300|W
Qg Gate Charge: 150nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB100NF04T4 is a Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • Standard threshold drive
  • 100% avalanche tested

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,390.00
USD
Quantity
Unit Price
1,000
$1.39
2,000
$1.38
4,000
$1.37
5,000+
$1.36
Product Variant Information section