text.skipToContent text.skipToNavigation

Manufacturer Part #

STD16NF06LT4

N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1928
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.07Ω
Rated Power Dissipation: 40|W
Qg Gate Charge: 7.5nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD16NF06LT4 is a N-channel STripFET™ II power MOSFET with voltage of 60 V and power dissipation of 40 W. Available in a TO-252-3 package.

The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • Logic level device
  • Low threshold drive
  • Drain-source voltage (VGS = 0): 60 V
  • VDGR Drain-gate voltage (RGS = 20 kΩ): 60 V
  • VGS Gate- source voltage: ± 18 V
  • ID Drain current (continuous) at TC = 25°C: 24 A

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
17,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
2500
Multiple Of:
2500
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,437.50
USD
Quantity
Web Price
2,500
$0.575
5,000
$0.47
7,500
$0.465
10,000+
$0.46
Product Variant Information section