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Référence fabricant

STP10NK80ZFP

N-Channel 800 V 0.9 Ω SuperMESH Power MosFet - TO-220FP

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP10NK80ZFP - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 900mΩ
Rated Power Dissipation: 40W
Qg Gate Charge: 72nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 9A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 65ns
Rise Time: 20ns
Fall Time: 17ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 2180pF
Style d'emballage :  TO-220FP (TO-220FPAB)
Méthode de montage : Through Hole
Fonctionnalités et applications
The STP10NK80ZFP is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeability

Applications:

  • Switching application

View the Complete family of STP10N Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
2 260,00 $
USD
Quantité
Prix unitaire
10
$2.35
40
$2.32
150
$2.28
400
$2.26
1 500+
$2.20
Product Variant Information section