STP55NF06L in Tube by STMicroelectronics | Mosfet | Future Electronics
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Référence fabricant

STP55NF06L

N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2402
Product Specification Section
STMicroelectronics STP55NF06L - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 95|W
Qg Gate Charge: 37nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STP55NF06L is a Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.

The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features:

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application oriented characterization

Applications:

  • Switching application

View the Complete family of STP5 Mosfet Transistors

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Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
2000
Multiples de :
50
Total 
1 710,00 $
USD
Quantité
Prix unitaire
50
$0.915
200
$0.89
750
$0.865
1 250
$0.855
2 500+
$0.825